phase change memory

Effect of Thermal and Electrical Properties of Materials on the Power Consumption of Phase Change Memory

材料热电特性对相变存储器功耗的影响

With the advantages of fast operation speed , high reliability and good scalability , phase change memory ( PCM ) is believed to be the most promising next generation nonvolatile memory .

相变存储器具有读写速率快、可靠性高、微缩能力强等优点，因而被认为是最有希望替代闪存的下一代通用非易失性存储器。

Device Unit Test System on Phase Change Memory

相变存储器器件单元测试系统

A full-function phase change memory chip has been successfully fabricated .

研制成功了全功能相变存储器芯片。

Multiple-state storage capability of nitrogen-doped Ge_2Sb_2Te_5 film for phase change memory

氮掺杂Ge2Sb2Te5相变存储器的多态存储功能

The results show that the width and amplitude of the precision can be precisely adjusted , which lays foundation for phase change memory measurement .

研究结果表明，本论文研究设计的精密电流源在脉冲宽度和脉冲幅值上可精确可调，为相变存储器的测试奠定了基础。

Nitrogen-doped Ge_2Sb_2Te_5 ( N-GST ) film for phase change memory was prepared by reactive sputtering .

通过反应溅射的方法，制备了N掺杂的Ge2Sb2Te5（NGST）薄膜，用作相变存储器的存储介质。

Phase Change Memory , PCM for short , which has many advantages and is believed to be the best alternative to flash memory , is a new nonvolatile memory , and has a promising prospect .

相变存储器（Phasechangememory）简称PCM，是一种新型的非易失性存储器，其具有诸多优秀性能，是未来计算机应用中闪存的最佳替代品，具有不可估量的发展前景。

Phase - Change Memory

相变存储&关于存储的新可能

Diode is considered to be the best driver of high-density phase change Random Access Memory ( PCRAM ) for its advantage of the cell area .

由于二极管在单元尺寸上的优势，被认为是高密度相变存储器中驱动管的不二之选。

Research Progress on Phase Change Materials for Phase Change Memory

基于相变存储器的相变存储材料的研究进展